The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Mar. 03, 2006
Li-shyue Lai, Jhube, TW;
Denny Duan-lee Tang, Saratoga, CA (US);
Wen-chin Lin, Hsin-Chu, TW;
Teng-chien Yu, Hsin-Chu, TW;
Hui-fang Tsai, Kaohsiung, TW;
Wei-hsiang Wang, Hsin-Chu, TW;
Shyhyeu Wang, Jongli, TW;
Li-Shyue Lai, Jhube, TW;
Denny Duan-lee Tang, Saratoga, CA (US);
Wen-chin Lin, Hsin-Chu, TW;
Teng-Chien Yu, Hsin-Chu, TW;
Hui-Fang Tsai, Kaohsiung, TW;
Wei-Hsiang Wang, Hsin-Chu, TW;
Shyhyeu Wang, Jongli, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ritek Corporation, Hsin-Chu, TW;
Abstract
A phase change memory device and a method of forming the same are provided. The phase change memory device includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. The phase change memory device may further include a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom electrode and the top electrode are preferably greater than the resistivity of the phase change material in the crystalline state.