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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Chin Lin

This inventor holds 33 USPTO granted patents, primarily in Magnetic Memory Devices. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Industrial Technology Research Institute, National Yang Ming Chiao Tung University. Active years: 1999-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Chin Lin. Retrieved from https://idiyas.com/inventor/wen-chin-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 33

% Patents Active = 66.7

Average Co-Inventor Count = 3.5

ph-index = 11

Forward Citations = 418(Granted Patents)


Location History:

  • Hsinchu, TW (1999 - 2001)
  • Hsin-Chu, TW (2005 - 2022)

Company Filing History:

goldMedal30 out of 43,653 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 9,323 
 
Industrial Technology Research Institute
 patents
bronzeMedal1 out of 1,254 
 
National Yang Ming Chiao Tung University
 patents
4. 1 out of 49 
 
Ritek Corporation
 patents
where one patent can have more than one assignee

Years Active: 1999-2024

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Areas of Expertise:
Tunnel Magnetoresistance
Phase Change Memory
MRAM Design
Magnetic Memory Cells
Semiconductor Device
Hydrogen Sensing
Magnetic Shielding
Integrated Capacitor
High Energy Particles
Magnetoresistive Structures
Optical Amplifier
Memory Array Architecture
33 patents (USPTO):Explore Patents
1. 12183379 - Enhancing tunnel magnetoresistance in memory device comprising a memory cell with a memory element coupled between a switch and a negative resistance device (2024-12-31),
2. 11532341 - Method for enhancing tunnel magnetoresistance in memory device (2022-12-20),
3. 10998024 - Method for enhancing tunnel magnetoresistance in memory device (2021-05-04),
4. 10753917 - Hydrogen sensing device (2020-08-25),
5. 8263959 - Phase change memory device and method of manufacture thereof (2012-09-11),
6. 8153471 - Method for forming a reduced active area in a phase change memory structure (2012-04-10),
7. 8022382 - Phase change memory devices with reduced programming current (2011-09-20),
8. 7964900 - Semiconductor device with semi-insulating substrate portions (2011-06-21),
9. 7858980 - Reduced active area in a phase change memory structure (2010-12-28),
10. 7719882 - Advanced MRAM design (2010-05-18),
11. 7622358 - Semiconductor device with semi-insulating substrate portions and method for forming the same (2009-11-24),
12. 7599215 - Magnetoresistive random access memory device with small-angle toggle write lines (2009-10-06),
13. 7554145 - Magnetic memory cells and manufacturing methods (2009-06-30),
14. 7545662 - Method and system for magnetic shielding in semiconductor integrated circuit (2009-06-09),
15. 7443638 - Magnetoresistive structures and fabrication methods (2008-10-28),

Title: Inventor Wen-Chin Lin: Revolutionizing Technology in Hsin-Chu

Introduction: Wen-Chin Lin is a pioneering inventor based in Hsin-Chu, Taiwan, known for her groundbreaking contributions to the field of technology.

Latest Patents: Wen-Chin Lin holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing her diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Wen-Chin Lin has worked with leading tech companies and research institutions, consistently pushing the boundaries of technological advancement.

Collaborations: Throughout her career, Wen-Chin Lin has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange.

Conclusion: Wen-Chin Lin's passion for innovation and her relentless pursuit of technological excellence continue to inspire the next generation of inventors and shape the future of technology in Hsin-Chu and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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