The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2009
Filed:
Dec. 14, 2006
Yuan-hung Liu, Hsinchu, TW;
Chih-ta Wu, Hsinchu, TW;
Lan-lin Chao, Sindian, TW;
Yeur-luen Tu, Taichung, TW;
Wen-chin Lin, Hsinchu, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Yuan-Hung Liu, Hsinchu, TW;
Chih-Ta Wu, Hsinchu, TW;
Lan-Lin Chao, Sindian, TW;
Yeur-Luen Tu, Taichung, TW;
Wen-Chin Lin, Hsinchu, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.