This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Ritek Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
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Years Active: 2011
Title: Shyhyeu Wang: Innovator in Phase Change Memory Technology
Introduction
Shyhyeu Wang is a notable inventor based in Jongli, Taiwan. He has made significant contributions to the field of memory devices, particularly through his innovative work on phase change memory technology. With a focus on reducing programming current, his inventions have the potential to enhance the efficiency and performance of memory devices.
Latest Patents
Wang holds a patent for "Phase change memory devices with reduced programming current." This patent describes a phase change memory device that includes a conducting electrode in a dielectric layer, a bottom electrode over the conducting electrode, a phase change layer over the bottom electrode, and a top electrode over the phase change layer. Additionally, the device may feature a heat sink layer between the phase change layer and the top electrode. The resistivities of the bottom and top electrodes are designed to be greater than that of the phase change material in its crystalline state. This innovation aims to improve the overall functionality and efficiency of phase change memory devices.
Career Highlights
Throughout his career, Shyhyeu Wang has worked with prominent companies in the semiconductor industry. Notably, he has been associated with Taiwan Semiconductor Manufacturing Company Ltd. and Ritek Corporation. His experience in these organizations has allowed him to develop and refine his expertise in memory technology.
Collaborations
Wang has collaborated with several talented individuals in his field, including Li-Shyue Lai and Denny Duan-Lee Tang. These collaborations have contributed to the advancement of technology in memory devices and have fostered innovation within the industry.
Conclusion
Shyhyeu Wang's contributions to phase change memory technology exemplify his commitment to innovation and excellence. His patent and career achievements highlight the importance of advancements in memory devices, paving the way for future developments in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile