Hsin-Chu, Taiwan

Teng-Chien Yu


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Inventor Profile: Teng-Chien Yu

Introduction

Teng-Chien Yu, based in Hsin-Chu, Taiwan, is an esteemed inventor known for his innovative contributions in the field of memory devices. With a focus on enhancing data storage technologies, Yu has developed a patent that addresses the key challenges of programming currents in phase change memory devices.

Latest Patents

Yu holds a notable patent titled "Phase Change Memory Devices with Reduced Programming Current". This patented technology consists of a unique structure featuring a conducting electrode embedded in a dielectric layer, complemented by a bottom electrode, a phase change layer, and a top electrode. The design also incorporates a heat sink layer positioned between the phase change layer and the top electrode. Notably, the resistivities of both the bottom and top electrodes are designed to exceed that of the phase change material when in its crystalline state, ultimately improving device efficiency.

Career Highlights

Throughout his career, Teng-Chien Yu has contributed significantly to the semiconductor industry. He has held key roles in prominent companies such as Taiwan Semiconductor Manufacturing Company Limited and Ritek Corporation. His expertise in memory device technology has positioned him as a valuable asset in these organizations, significantly influencing their advancements in storage solutions.

Collaborations

Yu has collaborated with talented colleagues, including Li-Shyue Lai and Denny Duan-Lee Tang. These collaborations have fostered an innovative environment that has propelled their projects forward, leading to advancements in phase change memory technology.

Conclusion

Teng-Chien Yu's contributions to the realm of phase change memory devices exemplify the impact of innovative thinking in technology. His patent showcases a significant advancement in memory device architecture, paving the way for enhanced performance and efficiency in data storage solutions. As he continues his work, his experience and creativity will undoubtedly lead to further innovations in the field.

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