The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2012
Filed:
Apr. 16, 2010
Applicants:
Li-shyue Lai, Jhube, TW;
Tsz-mei Kwok, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Inventors:
Li-Shyue Lai, Jhube, TW;
Tsz-Mei Kwok, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is disposed adjacent to the fin-channel body. The at least one S/D region is substantially free from including any fin structure.