The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
May. 18, 2012
Applicants:
Yu-lin Yang, Baoshan Township, Hsinchu County, TW;
Tsu-hsiu Perng, Hsin-Chu, TW;
Chih Chieh Yeh, Taipei, TW;
Li-shyue Lai, Jhube, TW;
Inventors:
Yu-Lin Yang, Baoshan Township, Hsinchu County, TW;
Tsu-Hsiu Perng, Hsin-Chu, TW;
Chih Chieh Yeh, Taipei, TW;
Li-Shyue Lai, Jhube, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/283 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method and device including a substrate having a fin. A metal gate structure is formed on the fin. The metal gate structure includes a stress metal layer formed on the fin such that the stress metal layer extends to a first height from an STI feature, the first height being greater than the fin height. A conduction metal layer is formed on the stress metal layer.