Tsu-Hsiu Perng

This inventor holds 31 USPTO granted patents and 4 published patent applications, primarily in FinFET Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2014-2025.

USPTO Granted Patents = 31 (Patent Applications = 4)

% Patents Active = 96.8

Average Co-Inventor Count = 5.3

ph-index = 6

Forward Citations = 318(Granted Patents)

Location History:

Hsinchu County, TW (2018 - 2023)
Hsin-Chu, TW (2014 - 2024)
Zhubei, TW (2015 - 2024)

Company Filing History:

31 out of 42,759

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2014-2025

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Areas of Expertise:

FinFET

Gate Structures

Dummy Fin

Air Spacer

Interconnect Structure

Metal Gates

Semiconductor Device

Integrated Circuit

Oxide Layer

Spin-On Dielectric

Capping Layer

Cut-Last Process

31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12336214 - Inner spacers for gate-all-around semiconductor devices (2025-06-17),

2. 12154822 - Dummy fin structures and methods of forming same (2024-11-26),

3. 12094952 - Air spacer formation with a spin-on dielectric material (2024-09-17),

4. 11990545 - Semiconductor device having fully oxidized gate oxide layer and method for making the same (2024-05-21),

5. 11923251 - Methods of cutting metal gates and structures formed thereof (2024-03-05),

6. 11855214 - Inner spacers for gate-all-around semiconductor devices (2023-12-26),

7. 11664268 - Dummy fin structures and methods of forming same (2023-05-30),

8. 11637062 - Interconnect structure and method for manufacturing the interconnect structure (2023-04-25),

9. 11626482 - Air spacer formation with a spin-on dielectric material (2023-04-11),

10. 11545400 - Methods of cutting metal gates and structures formed thereof (2023-01-03),

11. 11508843 - Semiconductor device having fully oxidized gate oxide layer and method for making the same (2022-11-22),

12. 11257753 - Interconnect structure and method for manufacturing the interconnect structure (2022-02-22),

13. 11222826 - FinFET structure and device (2022-01-11),

14. 11152267 - Methods of cutting metal gates and structures formed thereof (2021-10-19),

15. 11069558 - Dummy fin structures and methods of forming same (2021-07-20),

Title: The Innovative Journey of Inventor Tsu-Hsiu Perng

Introduction: Tsu-Hsiu Perng, a talented inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Tsu-Hsiu Perng holds several patents in the areas of electronics and semiconductor technology, showcasing his expertise and creativity in these domains.

Career Highlights: With a career spanning over two decades, Tsu-Hsiu Perng has worked with leading tech companies, where he played a pivotal role in developing cutting-edge products that have revolutionized the industry.

Collaborations: Throughout his career, Tsu-Hsiu Perng has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and excellence in all his projects.

Conclusion: Tsu-Hsiu Perng's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of the tech industry.