The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Nov. 15, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yen-Chun Huang, New Taipei, TW;
Chih-Tang Peng, Zhubei, TW;
Kuang-Yuan Hsu, Taichung, TW;
Tai-Chun Huang, Hsinchu, TW;
Tsu-Hsiu Perng, Zhubei, TW;
Tien-I Bao, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A cut-last process for cutting fin segments of a FinFET structure on a substrate utilizes a two-step process. After the fins are formed, an oxide material is deposited in the trenches of the FinFET structure. The oxide material can be an STI oxide or a low-stress dummy gapfill material. A fin segment can be removed by an etchant and can leave a concave shaped (such as a u-shape or v-shape) portion of silicon at the bottom of the fin. Where the oxide material is an STI oxide, the void left by removing the fin can be filled with replacement STI oxide. Where the oxide material is a dummy gapfill material, the dummy gapfill material can be removed and replaced with an STI oxide or converted to an STI oxide and filled with replacement STI oxide before or after the conversion.