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For the Inventor, By the Inventor

Taichung, Taiwan

Kuang-Yuan Hsu

This inventor holds 75 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kuang-Yuan Hsu. Retrieved from https://idiyas.com/inventor/kuang-yuan-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 75 

% Patents Active = 80.0

Average Co-Inventor Count = 3.5

ph-index = 10

Forward Citations = 1,763(Granted Patents)

Forward Citations (Not Self Cited) = 1,582(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Taichung County, TW (2012 - 2013)
  • Hsin-Chu, TW (2018)
  • Fongyuan, TW (2011 - 2019)
  • Tiachung, TW (2019)
  • Taichung, TW (2015 - 2024)

Company Filing History:

goldMedal75 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2011-2026

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Areas of Expertise:
Semiconductor Device
Metal Gate Structure
FinFET
Atomic Layer Deposition
Doping
Thin Film Manufacturing
Interconnect Structure
Barrier Layers
Sidewall Spacers
Gate Structure
Dielectric Layer
Self Aligned Contact
75 patents (USPTO):Explore Patents
1. 12751223 - Treatment to control deposition rate (2026-09-29),
2. 12477807 - Semiconductor device and a method for fabricating the same (2025-11-18),
3. 12014922 - Apparatus for manufacturing a thin film and a method therefor (2024-06-18),
4. 11670500 - Treatment system and method (2023-06-06),
5. 11569362 - Semiconductor device and a method for fabricating the same (2023-01-31),
6. 11342177 - Treatment to control deposition rate (2022-05-24),
7. 11244822 - Apparatus for manufacturing a thin film and a method therefor (2022-02-08),
8. 11227929 - Metal gate structure (2022-01-18),
9. 11222826 - FinFET structure and device (2022-01-11),
10. 11171134 - Techniques providing metal gate devices with multiple barrier layers (2021-11-09),
11. 11053584 - System and method for supplying a precursor for an atomic layer deposition (ALD) process (2021-07-06),
12. 10867789 - Treatment to control deposition rate (2020-12-15),
13. 10796898 - Treatment system and method (2020-10-06),
14. 10714586 - Semiconductor device and a method for fabricating the same (2020-07-14),
15. 10651283 - Metal gate structure (2020-05-12),

Title: An Overview of Kuang-Yuan Hsu and His Innovations

Introduction

Kuang-Yuan Hsu, based in Taichung, Taiwan, is a prominent inventor renowned for his contributions to the semiconductor industry. With an impressive portfolio of 73 patents, Hsu continues to innovate and push the boundaries of technology.

Latest Patents

Hsu's latest inventions showcase his expertise in semiconductor fabrication and processes. One of his significant patents is for an "Apparatus for Manufacturing a Thin Film," which involves a sophisticated vacuum chamber divided into multiple reaction regions. This design allows for efficient wafer transfer and gas utilization, optimizing the manufacturing process. Another essential patent is related to a "Treatment System and Method" for descumming a dielectric layer. This method utilizes a mixture of precursors and a carrier gas to create a treatment plasma that effectively cleans the dielectric layer after patterning.

Career Highlights

Kuang-Yuan Hsu is currently employed by Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor manufacturing sector. His work and innovations have contributed significantly to advancements in thin film technology and semiconductor processing.

Collaborations

Throughout his career, Hsu has collaborated with notable colleagues, including Da-Yuan Lee and Xiong-Fei Yu. These collaborations have fostered an environment of shared knowledge and expertise, leading to groundbreaking innovations in their field.

Conclusion

In conclusion, Kuang-Yuan Hsu stands out as a key inventor in the semiconductor industry, with a focus on developing advanced manufacturing techniques. His numerous patents reflect his commitment to innovation and the continuous improvement of semiconductor processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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