The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Jul. 31, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Wan-Yi Kao, Baoshan Township, TW;
Kuang-Yuan Hsu, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); C23C 16/02 (2006.01); H01L 21/033 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02312 (2013.01); C23C 16/02 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02123 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/0332 (2013.01); H01L 21/306 (2013.01); H01L 29/66795 (2013.01);
Abstract
A treatment, structure and system are provided that modify the deposition process of a material that can occur over two differing materials. In an embodiment the deposition rates may be adjusted by the treatment to change the deposition rate of one of the materials to be more in line with the deposition rate of a second one of the materials. Also, the deposition rates may be modified to be different from each other, to allow for a more selective deposition over the first one of the materials than over the second one of the materials.