Taiwan Semiconductor Manufacturing Comp. Ltd.

Kuang-Yuan Hsu

Da-Yuan Lee

Xiong-Fei Yu

Peng-Soon Lim

Wei-Yang Lee

Tze-Liang Lee

Chun-Yuan Chou

Wan-Yi Kao

Jeff J Xu

Jian-Hao Chen

Cheng-Hao Hou

Tai-Chun Huang

Pei-Ren Jeng

Joung-Wei Liou

Jyh-Huei Chen

Po-Cheng Shih

Chih-Pin Tsao

Pei-Yu Chou

Chia-Ming Hsu

Fan-Yi Hsu

Meng-Hsuan Chan

Hun-Jan Tao

Chung-Chi Ko

Chia-Pin Lin

Matt Yeh

Chih-Hung Sun

Tien-I Bao

Ka-Hing Fung

Chih-Tang Peng

Chien-Tai Chan

Hsueh Wen Tsau

Chun-Fu Cheng

Tsu-Hsiu Perng

Bor-Wen Chan

Hsien-Chin Lin

Yen-Chun Huang

Tsai-Jung Ho

Chia-Cheng Chou

Shih-Syuan Huang

Hui OuYang

Tsai-Fu Hsiao

Han-Pin Chung

Hung-Kai Chen

Tsung-Hung Lee

Chien-Kuo Huang

Bor-Chiuan Hsieh

Keng-Chu Lin

Chih-Hao Chen

Yu-Yun Peng

Chung-Ting Ko

Ming-Jie Huang

Fang Wen Tsai

Chia Cheng Chou

Shun Wu Lin

Yi-Chen Huang

Hui-Chun Yang

Pei-Wen Huang

Li-Shiun Chen

Wei-Yeh Tang

Shin Hsien Liao

Jim Cy Huang

Huang Ching Yu

A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.

Semiconductor device and a method for fabricating the same

An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

Apparatus for manufacturing a thin film and a method therefor

A method of descumming a dielectric layer is provided. In an embodiment the dielectric layer is deposited over a substrate, and a photoresist is applied, exposed, and developed after the photoresist has been applied. Once the pattern of the photoresist is transferred to the underlying dielectric layer, a descumming process is performed, wherein the descumming process utilizes a mixture of a carbon-containing precursor, a descumming precursor, and a carrier gas. The mixture is ignited into a treatment plasma, and the treatment plasma is applied to the dielectric layer in order to descum the dielectric layer.

Treatment system and method

A treatment, structure and system are provided that modify the deposition process of a material that can occur over two differing materials. In an embodiment the deposition rates may be adjusted by the treatment to change the deposition rate of one of the materials to be more in line with the deposition rate of a second one of the materials. Also, the deposition rates may be modified to be different from each other, to allow for a more selective deposition over the first one of the materials than over the second one of the materials.

Treatment to control deposition rate

A method includes forming a trench over a substrate, wherein the trench is surrounded by gate spacers and an inter-layer dielectric layer, depositing a dielectric layer on a bottom and along sidewalls of the trench, depositing a metal layer over the dielectric layer, depositing a protection layer over the metal layer, wherein the protection layer has an uneven thickness, applying an etch-back process to the protection layer and the metal layer, wherein as a result of applying the etch-back process, a portion of the metal layer has been removed and at least a portion of the protection layer remains at the bottom of the trench and removing the protection layer from the trench.

Metal gate structure

A cut-last process for cutting fin segments of a FinFET structure on a substrate utilizes a two-step process. After the fins are formed, an oxide material is deposited in the trenches of the FinFET structure. The oxide material can be an STI oxide or a low-stress dummy gapfill material. A fin segment can be removed by an etchant and can leave a concave shaped (such as a u-shape or v-shape) portion of silicon at the bottom of the fin. Where the oxide material is an STI oxide, the void left by removing the fin can be filled with replacement STI oxide. Where the oxide material is a dummy gapfill material, the dummy gapfill material can be removed and replaced with an STI oxide or converted to an STI oxide and filled with replacement STI oxide before or after the conversion.

FinFET structure and device

A semiconductor device with a metal gate is disclosed. An exemplary semiconductor device with a metal gate includes a semiconductor substrate, source and drain features on the semiconductor substrate, a gate stack over the semiconductor substrate and disposed between the source and drain features. The gate stack includes a HK dielectric layer formed over the semiconductor substrate, a plurality of barrier layers of a metal compound formed on top of the HK dielectric layer, wherein each of the barrier layers has a different chemical composition; and a stack of metals gate layers deposited over the plurality of barrier layers.

Techniques providing metal gate devices with multiple barrier layers

Systems and methods for supplying a precursor material for an atomic layer deposition (ALD) process are provided. A gas supply provides one or more precursor materials to a deposition chamber. The deposition chamber receives the one or more precursor materials via an input line. A gas circulation system is coupled to an output line of the deposition chamber. The gas circulation system includes a gas composition detection system configured to produce an output signal indicating a composition of a gas exiting the deposition chamber through the output line. The gas circulation system also includes a circulation line configured to transport the gas exiting the deposition chamber to the input line. A controller is coupled to the gas supply. The controller controls the providing of the one or more precursor materials by the gas supply based on the output signal of the gas composition detection system.

System and method for supplying a precursor for an atomic layer deposition (ALD) process

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Taichung, Taiwan

Kuang-Yuan Hsu