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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11569362 B1

PDFFull Text
Date of Patent:
Jan. 31, 2023

Filed:

Jul. 13, 2020

Semiconductor device and a method for fabricating the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chia-Ming Hsu, Hualien County, TW;

Pei-Yu Chou, Hsinchu County, TW;

Chih-Pin Tsao, Zhubei, TW;

Kuang-Yuan Hsu, Taichung, TW;

Jyh-Huei Chen, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Bitew A Dinke

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 23/485 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 23/532 (2006.01); H01L 21/3205 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/285 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/32053 (2013.01); H01L 21/76802 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76849 (2013.01); H01L 21/76867 (2013.01); H01L 21/76877 (2013.01); H01L 21/76889 (2013.01); H01L 21/76897 (2013.01); H01L 21/823418 (2013.01); H01L 23/485 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 27/0886 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01); H01L 29/66795 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02167 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.

Find Patent Forward Citations

Hsu, Chia-Ming. (2023). Semiconductor device and a method for fabricating the same (U.S. Patent No. 11569362). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11569362

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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