The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Mar. 15, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Yun Peng, Hsinchu, TW;
Fu-Ting Yen, Hsinchu, TW;
Ting-Ting Chen, New Taipei, TW;
Keng-Chu Lin, Ping-Tung, TW;
Tsu-Hsiu Perng, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD., Hsinchu, TW;
Abstract
Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first semiconductor channel member and a second semiconductor channel member over the first semiconductor channel member and a porous dielectric feature that includes silicon and nitrogen. In the semiconductor device, the porous dielectric feature is sandwiched between the first and second semiconductor channel members and a density of the porous dielectric feature is smaller than a density of silicon nitride.