The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2010
Filed:
Sep. 06, 2005
Chung-hu KE, Taipei, TW;
Chih-hsin Ko, Fongshan, TW;
Hung-wei Chen, Hsinchu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Min-hwa Chi, Taipei, TW;
Chung-Hu Ke, Taipei, TW;
Chih-Hsin Ko, Fongshan, TW;
Hung-Wei Chen, Hsinchu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Min-Hwa Chi, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A CMOS device is provided. A semiconductor device comprises a substrate, the substrate having a first region and a second region, the first region having a first crystal orientation represented by a family of Miller indices comprising {i,j,k}, the second region having a second crystal orientation represented a family of Miller indices comprising {l,m,n}, wherein l+m+n>i+j+k. Alternative embodiments further comprise an NMOSFET formed on the first region, and a PMOSFET formed on the second region. Embodiments further comprise a Schottky contact formed with at least one of a the NMOSFET or PMOSFET.