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For the Inventor, By the Inventor

Taipei, Taiwan

Chung-Hu Ke

USPTO Granted Patents = 27

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 220(Granted Patents)


Company Filing History:

goldMedal27 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2005-2017

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27 patents (USPTO):
1. 9673105 - CMOS devices with Schottky source and drain regions (2017-06-06),
2. 8569837 - MOS devices having elevated source/drain regions (2013-10-29),
3. 8426298 - CMOS devices with Schottky source and drain regions (2013-04-23),
4. 8154107 - Semiconductor device and a method of fabricating the device (2012-04-10),
5. 8084305 - Isolation spacer for thin SOI devices (2011-12-27),
6. 8039284 - Dual metal silicides for lowering contact resistance (2011-10-18),
7. 8030210 - Contact barrier structure and manufacturing methods (2011-10-04),
8. 7985652 - Metal stress memorization technology (2011-07-26),
9. 7875959 - Semiconductor structure having selective silicide-induced stress and a method of producing same (2011-01-25),
10. 7803718 - BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture (2010-09-28),
11. 7745904 - Shallow trench isolation structure for semiconductor device (2010-06-29),
12. 7737532 - Hybrid Schottky source-drain CMOS for high mobility and low barrier (2010-06-15),
13. 7709903 - Contact barrier structure and manufacturing methods (2010-05-04),
14. 7582934 - Isolation spacer for thin SOI devices (2009-09-01),
15. 7569896 - Transistors with stressed channels (2009-08-04),

Title: Innovations and Contributions of Chung-Hu Ke in Semiconductor Technology

Introduction: Chung-Hu Ke is a prominent inventor based in Taipei, Taiwan, known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 27 patents, he has been at the forefront of innovation, particularly in the development of advanced CMOS devices.

Latest Patents: Among his latest inventions, Chung-Hu Ke developed a semiconductor structure that includes a CMOS device featuring Schottky source and drain regions. This innovative design encapsulates an NMOS device on a semiconductor substrate, which utilizes a Schottky source/drain extension region, enhancing its operational efficiency. Moreover, he has introduced a PMOS device that comprises a source/drain extension region made of non-metal materials, potentially improving the device's performance. His work also includes innovations in MOS devices, particularly in the design of elevated source/drain regions, which features a deep source/drain region adjacent to a gate electrode, enhancing the overall semiconductor structure's effectiveness.

Career Highlights: Chung-Hu Ke is affiliated with Taiwan Semiconductor Manufacturing Company Limited, where he has played a crucial role in pioneering semiconductor advancements. His career is marked by a dedication to research and innovation that has helped propel the company as a leader in the semiconductor industry.

Collaborations: Throughout his career, Chung-Hu has collaborated closely with notable coworkers such as Wen-Chin Lee and Chih-Hsin Ko. Their combined efforts have led to numerous breakthroughs in semiconductor technology, underscoring the importance of teamwork in driving innovation in this competitive field.

Conclusion: Chung-Hu Ke's contributions to semiconductor technology through his innovative patents have positioned him as a key figure in the industry. His work not only enhances the performance of devices but also paves the way for future advancements in semiconductor engineering. As he continues to innovate, Chung-Hu Ke remains a vital asset to Taiwan Semiconductor Manufacturing Company Limited and the broader technological landscape.

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