The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 10, 2012
Filed:
Feb. 07, 2007
Chung-hu KE, Taipei, TW;
Chih-hsin Ko, Fongshan, TW;
Wen-chin Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having at least one transistor covered by an ultra-stressor layer, and method for fabricating such a device. In an NMOS device, the ultra-stressor layer includes a tensile stress film over the source and drain regions, and a compressive stress film over the poly region. In a PMOS device, the ultra-stressor layer includes a compressive stress film over the source and drain regions and a tensile stress film over the poly region. In a preferred embodiment, the semiconductor device includes a PMOS transistor and an NMOS transistor forming a CMOS device and covered with an ultra stressor layer.