The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2011
Filed:
Sep. 14, 2007
Chung-hu KE, Taipei, TW;
Ta-ming Kuan, Zhongli, TW;
Chih-hsin Ko, Fongshan, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chung-Hu Ke, Taipei, TW;
Ta-Ming Kuan, Zhongli, TW;
Chih-Hsin Ko, Fongshan, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and method for manufacturing a tensile strained NMOS and a compressive strained PMOS transistor pair, wherein a stressor material is sacrificial is disclosed. The method provides for a substrate, which includes a source/drain for an NMOS transistor, and a PMOS transistor. A first barrier layer is formed on the substrate and a first stressor material is formed on the first barrier layer. The first barrier layer is selectively removed from the PMOS transistor. The substrate is flash annealed and the remaining first stressor material and barrier layer is removed from the substrate.