The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2011
Filed:
Aug. 31, 2005
Applicants:
Chung-hu KE, Taipei, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chenming HU, Alamo, CA (US);
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
The channel of a MOSFET is selectively stressed by selectively stressing the silicide layers on the gate electrode and the source/drain. Stress in the silicide layer is selectively produced by orienting the larger dimensions of the silicide grains in a first direction and the smaller dimensions in a second, perpendicular direction, with one of the directions being parallel to the direction of carrier movement in the channel and the other direction being perpendicular thereto.