The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2010
Filed:
Oct. 29, 2008
Chih-hsin Ko, Fongshan, TW;
Tzu-juei Wang, Hsinchu, TW;
Hung-wei Chen, Hsinchu, TW;
Chung-hu KE, Taipei, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chih-Hsin Ko, Fongshan, TW;
Tzu-Juei Wang, Hsinchu, TW;
Hung-Wei Chen, Hsinchu, TW;
Chung-Hu Ke, Taipei, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A BiCMOS device with enhanced performance by mechanical uniaxial strain is provided. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate. A first contact etch stop layer with tensile stress is formed over the NMOS transistor, and a second contact etch stop layer with compressive stress is formed over the PMOS transistor and the bipolar transistor, allowing for an enhancement of each device. Another embodiment has, in addition to the stressed contact etch stop layers, strained channel regions in the PMOS transistor and the NMOS transistor, and a strained base in the BJT.