The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
May. 07, 2007
Chih-hsin Ko, Fongshan, TW;
Hung-wei Chen, Hsin-Chu, TW;
Chung-hu KE, Taipei, TW;
Ta-ming Kuan, Zhongli, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chih-Hsin Ko, Fongshan, TW;
Hung-Wei Chen, Hsin-Chu, TW;
Chung-Hu Ke, Taipei, TW;
Ta-Ming Kuan, Zhongli, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate; a gate dielectric over the semiconductor substrate; a gate electrode over the gate dielectric; a deep source/drain region adjacent the gate electrode; a silicide region over the deep source/drain region; and an elevated metallized source/drain region between the silicide region and the gate electrode. The elevated metallized source/drain region adjoins the silicide region.