The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Sep. 18, 2008
Hung-wei Chen, Hsin-Chu, TW;
Yider Wu, Hsin-Chu, TW;
Hung-Wei Chen, Hsin-Chu, TW;
Yider Wu, Hsin-Chu, TW;
EON Silicon Solution Inc., Hsin-Chu, TW;
Abstract
A semiconductor memory structure with stress regions includes a substrate defining a first and a second device zone; a first and a second stress region formed in each of the first and second device zone to yield stress different in level; a barrier plug separating the two device zones from each other; and a plurality of oxide spacers being located between the first stress regions and the barrier plug while in direct contact with the first stress regions. Due to the stress yielded at the stress regions, increased carrier mobility and accordingly, increased reading current can be obtained, and only a relatively lower reading voltage is needed to obtain an initially required reading current. As a result, the probability of stress-induced leakage current is reduced to enhance the data retention ability.