logo

For the Inventor, By the Inventor

Saratoga, NY, United States of America

Huai Huang

USPTO Granted Patents = 52 

Average Co-Inventor Count = 5.4

ph-index = 5

Forward Citations = 115(Granted Patents)

Forward Citations (Not Self Cited) = 89(Dec 10, 2025)


Location History:

  • Saratoga Springs, NY (US) (2018 - 2020)
  • Halfmoon, NY (US) (2020)
  • Saratoga, NY (US) (2017 - 2024)
  • Clifton Park, NY (US) (2017 - 2024)

Company Filing History:

goldMedal44 out of 164,135 
 
International Business Machines Corporation
 patents
silverMedal7 out of 1,853 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
bronzeMedal1 out of 20 
 
Adeia Semiconductor Solutions LLC
 patents

Years Active: 2017-2025

Loading Chart...
Areas of Expertise:
Airgap Spacer
Backside Power Delivery
Magnetic Tunnel Junction
Silicide Formation
Cylindrical Interconnects
Machine Learning
High-Density Capacitors
Selective Dielectric Deposition
Defectivity Measurement
Dual-Damascene Formation
Reflow Interconnect
Self-Aligned Airgaps
52 patents (USPTO):Explore Patents
1. 12494428 - Airgap spacer for power via (2025-12-09),
2. 12424557 - Dual structured buried rail (2025-09-23),
3. 12424549 - Skip-level TSV with hybrid dielectric scheme for backside power delivery (2025-09-23),
4. 12412836 - Backside power plane (2025-09-09),
5. 12334442 - Dielectric caps for power and signal line routing (2025-06-17),
6. 12261056 - Top via patterning using metal as hard mask and via conductor (2025-03-25),
7. 12218003 - Selective ILD deposition for fully aligned via with airgap (2025-02-04),
8. 11955424 - Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device (2024-04-09),
9. 11944013 - Magnetic tunnel junction device with minimum stray field (2024-03-26),
10. 11756887 - Backside floating metal for increased capacitance (2023-09-12),
11. 11676854 - Selective ILD deposition for fully aligned via with airgap (2023-06-13),
12. 11621199 - Silicide formation for source/drain contact in a vertical transport field-effect transistor (2023-04-04),
13. 11621189 - Barrier-less prefilled via formation (2023-04-04),
14. 11574864 - Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device (2023-02-07),
15. 11315827 - Skip via connection between metallization levels (2022-04-26),

Title: The Innovative Journey of Huai Huang

Introduction: Huai Huang, a talented inventor based in Saratoga, NY (US), has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Huai Huang's latest patents include a cutting-edge artificial intelligence algorithm for predictive analytics in healthcare, a revolutionary renewable energy storage system, and a state-of-the-art cybersecurity software for data protection.

Career Highlights: With a career spanning over two decades, Huai Huang has established himself as a pioneer in the tech industry. He has worked for renowned tech companies, leading research institutions, and prestigious universities, where he has spearheaded innovative projects and research initiatives.

Collaborations: Throughout his career, Huai Huang has collaborated with top engineers, scientists, and researchers from around the globe. His collaborative efforts have resulted in the development of groundbreaking technologies that have transformed various industries.

Conclusion: Huai Huang's passion for innovation, coupled with his relentless drive to push the boundaries of technology, has solidified his reputation as a visionary inventor. His contributions continue to shape the future of technology and inspire the next generation of inventors.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…