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Saratoga, NY, United States of America

Huai Huang

Average Co-Inventor Count = 5.45

ph-index = 5

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 111

Huai HuangLawrence Alfred Clevenger (44 patents)Huai HuangChristopher J Penny (34 patents)Huai HuangBenjamin David Briggs (31 patents)Huai HuangMichael Rizzolo (30 patents)Huai HuangHosadurga K Shobha (22 patents)Huai HuangBartlet H Deprospo (18 patents)Huai HuangNicholas Anthony Lanzillo (11 patents)Huai HuangRuilong Xie (7 patents)Huai HuangSu Chen Fan (5 patents)Huai HuangChih-Chao Yang (4 patents)Huai HuangKoichi Motoyama (4 patents)Huai HuangJunli Wang (3 patents)Huai HuangHeng Wu (3 patents)Huai HuangWei Wang (3 patents)Huai HuangRobert Russell Robison (2 patents)Huai HuangDexin Kong (2 patents)Huai HuangRobin Hsin Kuo Chao (2 patents)Huai HuangChanro Park (1 patent)Huai HuangSon Van Nguyen (1 patent)Huai HuangAlfred Grill (1 patent)Huai HuangTakeshi Nogami (1 patent)Huai HuangChristian Lavoie (1 patent)Huai HuangChristopher Joseph Waskiewicz (1 patent)Huai HuangJames John Kelly (1 patent)Huai HuangDimitri Houssameddine (1 patent)Huai HuangPrasad Bhosale (1 patent)Huai HuangTianji Zhou (1 patent)Huai HuangDevika Sil (1 patent)Huai HuangBenjamin D Briggs (1 patent)Huai HuangMary Breton (1 patent)Huai HuangHuai Huang (51 patents)Lawrence Alfred ClevengerLawrence Alfred Clevenger (637 patents)Christopher J PennyChristopher J Penny (165 patents)Benjamin David BriggsBenjamin David Briggs (187 patents)Michael RizzoloMichael Rizzolo (203 patents)Hosadurga K ShobhaHosadurga K Shobha (104 patents)Bartlet H DeprospoBartlet H Deprospo (32 patents)Nicholas Anthony LanzilloNicholas Anthony Lanzillo (92 patents)Ruilong XieRuilong Xie (1,158 patents)Su Chen FanSu Chen Fan (113 patents)Chih-Chao YangChih-Chao Yang (889 patents)Koichi MotoyamaKoichi Motoyama (112 patents)Junli WangJunli Wang (435 patents)Heng WuHeng Wu (170 patents)Wei WangWei Wang (35 patents)Robert Russell RobisonRobert Russell Robison (146 patents)Dexin KongDexin Kong (53 patents)Robin Hsin Kuo ChaoRobin Hsin Kuo Chao (25 patents)Chanro ParkChanro Park (308 patents)Son Van NguyenSon Van Nguyen (207 patents)Alfred GrillAlfred Grill (198 patents)Takeshi NogamiTakeshi Nogami (190 patents)Christian LavoieChristian Lavoie (173 patents)Christopher Joseph WaskiewiczChristopher Joseph Waskiewicz (67 patents)James John KellyJames John Kelly (47 patents)Dimitri HoussameddineDimitri Houssameddine (23 patents)Prasad BhosalePrasad Bhosale (16 patents)Tianji ZhouTianji Zhou (10 patents)Devika SilDevika Sil (6 patents)Benjamin D BriggsBenjamin D Briggs (3 patents)Mary BretonMary Breton (2 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. International Business Machines Corporation (43 from 163,870 patents)

2. Adeia Semiconductor Bonding Technologies Inc. (7 from 1,852 patents)

3. Adeia Semiconductor Solutions LLC (1 from 17 patents)


51 patents:

1. 12424557 - Dual structured buried rail

2. 12424549 - Skip-level TSV with hybrid dielectric scheme for backside power delivery

3. 12412836 - Backside power plane

4. 12334442 - Dielectric caps for power and signal line routing

5. 12261056 - Top via patterning using metal as hard mask and via conductor

6. 12218003 - Selective ILD deposition for fully aligned via with airgap

7. 11955424 - Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

8. 11944013 - Magnetic tunnel junction device with minimum stray field

9. 11756887 - Backside floating metal for increased capacitance

10. 11676854 - Selective ILD deposition for fully aligned via with airgap

11. 11621189 - Barrier-less prefilled via formation

12. 11621199 - Silicide formation for source/drain contact in a vertical transport field-effect transistor

13. 11574864 - Semiconductor device including a porous dielectric layer, and method of forming the semiconductor device

14. 11315827 - Skip via connection between metallization levels

15. 11244861 - Method and structure for forming fully-aligned via

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10/28/2025
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