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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsiao-Kang Chang

USPTO Granted Patents = 25 

Average Co-Inventor Count = 4.6

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal25 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2022-2025

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25 patents (USPTO):
1. 12482703 - Semiconductor device having thermally conductive air gap structure and method for manufacturing the same (2025-11-25),
2. 12463134 - Semiconductor interconnection structure and methods of forming the same (2025-11-04),
3. 12431426 - Semiconductor interconnection structures comprising a resistor device and methods of forming the same (2025-09-30),
4. 12431386 - Semiconductor device having metallization layer with low capacitance and method for manufacturing the same (2025-09-30),
5. 12424485 - Semiconductor structure with air gap and method for manufacturing the same (2025-09-23),
6. 12412804 - Semiconductor structure with improved heat dissipation (2025-09-09),
7. 12387928 - Method for manufacturing semiconductor structure with material in monocrystalline phase (2025-08-12),
8. 12334431 - Semiconductor interconnection structures and methods of forming the same (2025-06-17),
9. 12272597 - Semiconductor interconnection structures and methods of forming the same (2025-04-08),
10. 12249555 - Semiconductor device package including a thermal conductive layer and methods of forming the same (2025-03-11),
11. 12165945 - Thermal interconnect structure for thermal management of electrical interconnect structure (2024-12-10),
12. 12154850 - Semiconductor interconnection structures and methods of forming the same (2024-11-26),
13. 12094815 - Semiconductor structure having dielectric-on-dielectric structure and method for forming the semiconductor structure (2024-09-17),
14. 12094764 - Interconnect structure and methods of forming the same (2024-09-17),
15. 12080650 - Interconnect structure with low capacitance and high thermal conductivity (2024-09-03),

Title: Hsiao-Kang Chang - Leading Innovator in Semiconductor Manufacturing

Introduction

Hsiao-Kang Chang is a prominent inventor based in Hsinchu, Taiwan, recognized for his significant contributions to the field of semiconductor manufacturing. With an impressive portfolio of 19 patents, Chang has established himself as a leading figure in the innovative technologies that drive the semiconductor industry forward.

Latest Patents

Hsiao-Kang Chang's latest patents showcase groundbreaking methods in semiconductor structure fabrication. One of his notable patents is a "Method for manufacturing semiconductor structure with material in monocrystalline phase." This innovative method involves forming a dielectric layer over a base structure, creating a trench to expose the base structure, and integrating a metal contact. A series of atomic layer deposition (ALD) cycles are performed to create first atomic layers that serve as an etch stop layer, all while ensuring that these layers attain a monocrystalline phase at temperatures not exceeding 425° C.

Another key patent is titled "Semiconductor interconnection structures and methods of forming the same," which details the creation of a semiconductor structure that includes a dielectric layer with exceptional hardness and controlled dielectric constant. This invention emphasizes forming trenches and conductive features to enhance the efficiency and performance of semiconductor devices.

Career Highlights

Hsiao-Kang Chang is currently employed at Taiwan Semiconductor Manufacturing Company Limited (TSMC). His expertise in semiconductor technologies has been critical in advancing the company’s manufacturing processes and product capabilities. With a career marked by innovation, Chang is dedicated to improving the efficiency and efficacy of semiconductor applications.

Collaborations

Throughout his career, Hsiao-Kang Chang has collaborated with esteemed colleagues, including Shao-Kuan Lee and Hsin-Yen Huang. These partnerships have fostered an environment of creativity and enhanced the development of innovative solutions in semiconductor technology.

Conclusion

Hsiao-Kang Chang's contributions to the semiconductor industry through his inventive spirit and patent portfolio are truly remarkable. His ongoing work at TSMC and collaborations with talented colleagues continue to push the boundaries of technology, highlighting the vital role of innovation in shaping the future of semiconductor manufacturing.

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