The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Jun. 09, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Chin Lee, Taipei, TW;
Hsin-Yen Huang, New Taipei, TW;
Yen Ju Wu, Hsinchu, TW;
Shao-Kuan Lee, Kaohsiung, TW;
Kuang-Wei Yang, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure is disclosed. The method includes forming one or more first conductive features in a first dielectric layer, forming a metal layer on each of the one or more first conductive features, forming a first etch stop layer over the metal layer, forming a second etch stop layer on the first etch stop layer, wherein the second etch stop layer is a nitrogen-free layer. The method also includes forming a second dielectric layer on the second etch stop layer, and forming a second conductive feature in the second dielectric layer through the second etch stop layer, the first etch stop layer, and the metal layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile