The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Oct. 04, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Chin Lee, Hsinchu, TW;
Ting-Ya Lo, Hsinchu, TW;
Chi-Lin Teng, Hsinchu, TW;
Shao-Kuan Lee, Hsinchu, TW;
Kuang-Wei Yang, Hsinchu, TW;
Gary Hsu Wei Liu, Hsinchu, TW;
Yen-Ju Wu, Hsinchu, TW;
Jing-Ting Su, Hsinchu, TW;
Hsin-Yen Huang, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
Wei-Chen Chu, Hsinchu, TW;
Shu-Yun Ku, Hsinchu, TW;
Chia-Tien Wu, Hsinchu, TW;
Ming-Han Lee, Hsinchu, TW;
Hsin-Ping Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An interconnection structure and a manufacturing method thereof are provided. The interconnection structure includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is disposed on the first dielectric layer, the second dielectric layer is disposed on the first dielectric layer and surrounds the sidewalls of the first conductive feature, the barrier layer is disposed between the first dielectric layer and the second dielectric layer and between the sidewalls of the first conductive feature and the second dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile