Hsinchu, Taiwan

Jing-Ting Su

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jing-Ting Su. Retrieved from https://idiyas.com/inventor/jing-ting-su

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jing-Ting Su: Innovator in Semiconductor Technology

Introduction

Jing-Ting Su is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on innovative structures and manufacturing methods that enhance the performance of semiconductor devices.

Latest Patent Applications

Jing-Ting Su has filed several patent applications, including:

1. **INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF** - This application describes an interconnection structure that includes a first dielectric layer, a first conductive feature, a second dielectric layer, and a barrier layer. The first conductive feature is positioned on the first dielectric layer, while the second dielectric layer surrounds the sidewalls of the first conductive feature. The barrier layer is situated between the first dielectric layer and the second dielectric layer, as well as between the sidewalls of the first conductive feature and the second dielectric layer.

2. **SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC CAPACITANCE AND GOOD ELECTRICAL BREAKDOWN PERFORMANCE, AND METHOD FOR MANUFACTURING THE SAME** - This application outlines a method for manufacturing a semiconductor device. It involves preparing a conductive structure with multiple conductive features, which are spaced apart by recesses. A dielectric capping layer is conformally formed on the conductive structure, followed by a dielectric cover layer that fills the recesses. Portions of these layers are then removed to expose the conductive features, creating spacer features filled in the recesses. Each layer is made of a dielectric material doped with metal oxide.

Conclusion

Jing-Ting Su is an innovative inventor whose work in semiconductor technology is paving the way for advancements in the field. His latest patent applications reflect his commitment to improving device performance and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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