The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2026

Filed:

Jan. 03, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kai-Fang Cheng, Taoyuan District, TW;

Hsiao-Kang Chang, Hsinchu City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/692 (2026.01); H10D 30/47 (2025.01); H10P 14/20 (2026.01); H10P 14/60 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69391 (2026.01); H10D 30/4732 (2025.01); H10P 14/3414 (2026.01); H10P 14/6329 (2026.01); H10P 14/6514 (2026.01); H10P 14/6538 (2026.01); H10P 14/662 (2026.01);
Abstract

Semiconductor devices and methods of forming the same are provided. A method of the present disclosure includes depositing an aluminum nitride layer over a substrate, treating the aluminum nitride layer to convert a top portion of the aluminum nitride layer to an aluminum oxynitride layer, depositing a III-V semiconductor layer on the aluminum oxynitride layer, and forming a gate structure over the III-V semiconductor layer.


Find Patent Forward Citations

Quick Actions:

Cheng, Kai-Fang. (2026). Heat dissipation for field effect transistors (U.S. Patent No. 12677613). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12677613

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