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For the Inventor, By the Inventor

Taoyuan, Taiwan

Kai-Fang Cheng

USPTO Granted Patents = 30 

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 14(Granted Patents)


Location History:

  • Taoyuan County, TW (2017)
  • Hsinchu, TW (2023)
  • Taoyuan, TW (2017 - 2024)

Company Filing History:

goldMedal30 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2025

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30 patents (USPTO):
1. 12484310 - Semiconductor device structure and methods of forming the same (2025-11-25),
2. 12431426 - Semiconductor interconnection structures comprising a resistor device and methods of forming the same (2025-09-30),
3. 12424485 - Semiconductor structure with air gap and method for manufacturing the same (2025-09-23),
4. 12412804 - Semiconductor structure with improved heat dissipation (2025-09-09),
5. 12387928 - Method for manufacturing semiconductor structure with material in monocrystalline phase (2025-08-12),
6. 12334431 - Semiconductor interconnection structures and methods of forming the same (2025-06-17),
7. 12205946 - Semiconductor device structure and methods of forming the same (2025-01-21),
8. 12176247 - Metal oxide composite as etch stop layer (2024-12-24),
9. 12165945 - Thermal interconnect structure for thermal management of electrical interconnect structure (2024-12-10),
10. 12154850 - Semiconductor interconnection structures and methods of forming the same (2024-11-26),
11. 12080650 - Interconnect structure with low capacitance and high thermal conductivity (2024-09-03),
12. 11923357 - Semiconductor device structure and methods of forming the same (2024-03-05),
13. 11848198 - Method for manufacturing semiconductor device having low-k carbon-containing dielectric layer (2023-12-19),
14. 11830808 - Semiconductor structure and method making the same (2023-11-28),
15. 11658092 - Thermal interconnect structure for thermal management of electrical interconnect structure (2023-05-23),

Title: Innovations by Kai-Fang Cheng: Pioneering Advances in Semiconductor Technology

Introduction: Kai-Fang Cheng is a prominent inventor based in Taoyuan, Taiwan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 24 patents, Cheng has demonstrated his expertise and innovative spirit in the development of advanced semiconductor device structures and methodologies.

Latest Patents: Among his latest patents, Cheng has introduced groundbreaking concepts such as a semiconductor device structure and methods of forming it. This invention features a unique interfacial structure that comprises a first interfacial layer with a dielectric layer, a conductive feature, and a thermal conductive layer. Additionally, it includes a second interfacial layer that mirrors the first, enhancing the performance and reliability of semiconductor devices. Another notable patent by Cheng is the use of a metal oxide composite as an etch stop layer. This invention involves a substrate with a conductive feature, complemented by a metal-containing layer which contains M-O—X groups, optimizing the structural integrity and operational efficiency of semiconductor devices.

Career Highlights: Kai-Fang Cheng is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His work at this esteemed company has positioned him at the forefront of technological advancements, where he has played a crucial role in the evolution of semiconductor manufacturing processes.

Collaborations: Throughout his career, Cheng has collaborated with esteemed colleagues, including Hai-Ching Chen and Chi-Lin Teng. These partnerships have allowed for synergistic innovations and the sharing of knowledge within the field, further enhancing the impact of their combined expertise on semiconductor technology.

Conclusion: With a track record of 24 patents and ongoing contributions to semiconductor innovations, Kai-Fang Cheng exemplifies the spirit of modern invention. His work not only advances technological capabilities but also inspires future generations of inventors and engineers in the field.

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