Taoyuan, Taiwan

Kai-Fang Cheng

This inventor holds 36 USPTO granted patents and 17 published patent applications, primarily in Semiconductor Structures. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kai-Fang Cheng. Retrieved from https://idiyas.com/inventor/kai-fang-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36 

% Patents Active = 97.2

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Taoyuan County, TW (2017)
  • Hsinchu, TW (2023)
  • Taoyuan, TW (2017 - 2024)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Interconnect Layer
Thermal Management
Semiconductor Device
Etching Damage
Heat Dissipation
Self-Aligned Interconnection
Low Capacitance
Monocrystalline Phase
Dielectric Layer
Resistor Device
Air Gap
Metal Oxide Composite
36 patents (USPTO):Explore Patents

Title: Innovations by Kai-Fang Cheng: Pioneering Advances in Semiconductor Technology

Introduction: Kai-Fang Cheng is a prominent inventor based in Taoyuan, Taiwan, known for his significant contributions to semiconductor technology. With an impressive portfolio of 24 patents, Cheng has demonstrated his expertise and innovative spirit in the development of advanced semiconductor device structures and methodologies.

Latest Patents: Among his latest patents, Cheng has introduced groundbreaking concepts such as a semiconductor device structure and methods of forming it. This invention features a unique interfacial structure that comprises a first interfacial layer with a dielectric layer, a conductive feature, and a thermal conductive layer. Additionally, it includes a second interfacial layer that mirrors the first, enhancing the performance and reliability of semiconductor devices. Another notable patent by Cheng is the use of a metal oxide composite as an etch stop layer. This invention involves a substrate with a conductive feature, complemented by a metal-containing layer which contains M-O—X groups, optimizing the structural integrity and operational efficiency of semiconductor devices.

Career Highlights: Kai-Fang Cheng is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor industry. His work at this esteemed company has positioned him at the forefront of technological advancements, where he has played a crucial role in the evolution of semiconductor manufacturing processes.

Collaborations: Throughout his career, Cheng has collaborated with esteemed colleagues, including Hai-Ching Chen and Chi-Lin Teng. These partnerships have allowed for synergistic innovations and the sharing of knowledge within the field, further enhancing the impact of their combined expertise on semiconductor technology.

Conclusion: With a track record of 24 patents and ongoing contributions to semiconductor innovations, Kai-Fang Cheng exemplifies the spirit of modern invention. His work not only advances technological capabilities but also inspires future generations of inventors and engineers in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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