The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Aug. 19, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kai-Fang Cheng, Taoyuan, TW;
Cherng-Shiaw Jacob Tsai, New Taipei, TW;
Cheng-Chin Lee, Taipei, TW;
Ming-Hsien Lin, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
An interconnection structure includes a first dielectric layer, a first conductive layer disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer, a second conductive layer disposed in the second dielectric layer in electrical contact with the first conductive layer, a third dielectric layer formed over the second dielectric layer, wherein the third dielectric layer comprises silicon carbon-nitride (SiCN) based material, and a resistor device disposed in the third dielectric layer.