The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Feb. 17, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kai-Fang Cheng, Hsinchu, TW;
Cherng-Shiaw Tsai, Hsinchu, TW;
Cheng-Chin Lee, Hsinchu, TW;
Yen-Ju Wu, Hsinchu, TW;
Yen-Pin Hsu, Hsinchu, TW;
Li-Ling Su, Hsinchu, TW;
Ming-Hsien Lin, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.