The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Jul. 29, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Kai-Fang Cheng, Hsinchu, TW;
Cherng-Shiaw Tsai, Hsinchu, TW;
Cheng-Chin Lee, Hsinchu, TW;
Yen-Ju Wu, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/47 (2026.01); H10W 20/00 (2026.01); H10W 20/44 (2026.01); H10W 20/48 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10W 20/4462 (2026.01); H10W 20/037 (2026.01); H10W 20/071 (2026.01); H10W 20/47 (2026.01); H10W 20/48 (2026.01); H10W 20/425 (2026.01);
Abstract
An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.