The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Mar. 14, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Chin Lee, Taipei, TW;
Shau-Lin Shue, Hsinchu, TW;
Shao-Kuan Lee, Kaohsiung, TW;
Hsiao-Kang Chang, Hsinchu, TW;
Cherng-Shiaw Tsai, New Taipei, TW;
Kai-Fang Cheng, Taoyuan, TW;
Hsin-Yen Huang, New Taipei, TW;
Ming-Hsien Lin, Hsinchu County, TW;
Chuan-Pu Chou, Hsinchu County, TW;
Hsin-Ping Chen, Hsinchu County, TW;
Chia-Tien Wu, Taichung, TW;
Kuang-Wei Yang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.