The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2026

Filed:

Jun. 24, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hsin-Yen Huang, New Taipei, TW;

Ting-Ya Lo, Hsinchu, TW;

Shao-Kuan Lee, Kaohsiung, TW;

Chi-Lin Teng, Taichung, TW;

Shau-Lin Shue, Hsinchu, TW;

Hsiao-Kang Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H10D 30/62 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first conductive layer formed over a substrate, and an air gap structure adjacent to the first conductive layer. The semiconductor device structure includes a support layer formed over the air gap structure, and a sidewall surface of the support layer is aligned with a sidewall surface of the air gap structure.


Find Patent Forward Citations

Huang, Hsin-Yen. (2026). Semiconductor device structure with interconnect structure having air gap (U.S. Patent No. 12564045). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12564045

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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