The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Feb. 07, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Cheng-Chin Lee, Hsinchu, TW;
Ting-Ya Lo, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
Hsin-Yen Huang, Hsinchu, TW;
Shau-Lin Shue, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/00 (2026.01); H10P 50/28 (2026.01); H10W 20/42 (2026.01); H10W 20/46 (2026.01); H10W 20/47 (2026.01);
U.S. Cl.
CPC ...
H10W 20/098 (2026.01); H10W 20/034 (2026.01); H10W 20/072 (2026.01); H10W 20/076 (2026.01); H10W 20/084 (2026.01); H10W 20/42 (2026.01); H10W 20/46 (2026.01); H10W 20/47 (2026.01); H10P 50/283 (2026.01); H10P 50/285 (2026.01); H10P 50/287 (2026.01); H10W 20/037 (2026.01); H10W 20/056 (2026.01); H10W 20/0888 (2026.01);
Abstract
An interconnection structure is provided. The interconnection structure includes an etching-process-free first dielectric layer, a first conductive structure extending within the first dielectric layer, a second dielectric layer formed under the first dielectric layer, and a second conductive structure extending through both the first dielectric layer and the second conductive layer.