Semiconductor device having low dielectric capacitance, and method for manufacturing the same

Abstract

A method for manufacturing a semiconductor device includes: forming a conductive structure; forming an interconnect layer on the conductive structure, the interconnect layer including a conductive interconnect that is electrically connected to the conductive structure; and forming multiple conductive features and multiple spacer features on the interconnect layer, adjacent two of the conductive features being spaced apart from each other by a corresponding one of the spacer features, one of the conductive features being electrically connected to the conductive interconnect, each of the spacer features including a dielectric spacer layer contacting lateral surfaces of two of the conductive features that are adjacent to the spacer feature, and a cover segment disposed on the dielectric spacer layer and cooperating with the dielectric spacer layer to define an air gap between the two of the conductive features that are adjacent to the spacer feature.