Ibaraki, Japan

Hiroshi Yanagigawa

USPTO Granted Patents = 19 

Average Co-Inventor Count = 1.5

ph-index = 4

Forward Citations = 38(Granted Patents)


Location History:

  • Ohtsu, JP (1998)
  • Shiga, JP (1996 - 2011)
  • Hitachinaka, JP (2018 - 2020)
  • Ibaraki, JP (2017 - 2021)
  • Tokyo, JP (2002 - 2023)

Company Filing History:


Years Active: 1996-2025

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19 patents (USPTO):

Title: The Inventor Profile: Hiroshi Yanagigawa

Introduction: Meet Hiroshi Yanagigawa, a prolific inventor hailing from Ibaraki, Japan, with an impressive portfolio of 18 patents in his name. His groundbreaking work in the field of semiconductor devices has earned him recognition in the tech industry.

Latest Patents: Among his latest patents is a Semiconductor device designed to reduce on-resistance while effectively managing characteristic variation in a vertical MOSFET with a Super Junction structure. Another notable patent is for a method of manufacturing a trench gate type power MOSFET with a super-junction structure, focusing on improving device breakdown voltage and minimizing on-resistance.

Career Highlights: Hiroshi Yanagigawa has contributed his expertise to renowned companies such as Renesas Electronics Corporation and NEC Corporation. His innovative spirit and commitment to excellence have driven advancements in semiconductor technology, leaving a lasting impact in the industry.

Collaborations: Throughout his career, Hiroshi Yanagigawa has collaborated with talented individuals such as Katsumi Eikyu and Taro Moriya. Together, they have worked on cutting-edge projects that have pushed the boundaries of innovation in semiconductor design and manufacturing.

Conclusion: In conclusion, Hiroshi Yanagigawa stands as a pioneering figure in the world of semiconductor technology, with a remarkable track record of patents and contributions to the field. His dedication to driving progress and solving complex engineering challenges continues to inspire future generations of inventors and engineers worldwide.

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