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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11004749 B1

PDFFull Text
Date of Patent:
May. 11, 2021

Filed:

Sep. 17, 2019

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Taro Moriya, Ibaraki, JP;

Hiroshi Yanagigawa, Ibaraki, JP;

Kazuhisa Mori, Ibaraki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 27/24 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/823487 (2013.01); H01L 27/088 (2013.01); H01L 27/2454 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/42336 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 21/823425 (2013.01);
Abstract

A semiconductor device for suppressing a variation in characteristics caused by a current flowing at the time of breakdown is disclosed. The first power MOS transistor Qand the column CLM are formed in the first element region FCM defined in the epitaxial layer NEL, and the second power MOS transistor Qis formed in the second element region RCM. The first power MOS transistor Qincludes a first trench gate electrode TGE, and the second power MOS transistor Qincludes a second trench gate electrode TGE. The depth GDPof the first trench gate electrode TGEis shallower than the depth GDPof the second trench gate electrode TGE

Find Patent Forward Citations

Moriya, Taro. (2021). Semiconductor device and method of manufacturing the same (U.S. Patent No. 11004749). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11004749

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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