The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Nov. 29, 2022
Renesas Electronics Corporation, Tokyo, JP;
Yasutaka Nakashiba, Tokyo, JP;
Hiroshi Yanagigawa, Tokyo, JP;
Kazuhisa Mori, Tokyo, JP;
Toshiyuki Hata, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes: a first semiconductor chip including a first MOSFET of n-type and a first parasitic diode; and a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode. A first source electrode and a first gate wiring are formed in a first front surface of the first semiconductor chip, and a first drain electrode is formed in a first back surface of the first semiconductor chip. A second source electrode and a second gate wiring are formed in a second front surface of the second semiconductor chip, and a second drain electrode is formed in a second back surface of the second semiconductor chip. The first front surface and the second front surface face each other such that the first source electrode and the second source electrode are in contact with each other via a conductive paste.