The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Jul. 05, 2018
Renesas Electronics Corporation, Tokyo, JP;
Taro Moriya, Hitachinaka, JP;
Hiroyoshi Kudou, Hitachinaka, JP;
Hiroshi Yanagigawa, Hitachinaka, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate, a gate electrode, and a first contact plug. The semiconductor substrate includes a first surface and a second surface. Over the semiconductor substrate, a source region, a drain region, a drift region, and a body region are formed. A first trench in which the gate electrode is buried is formed in the first surface. The first surface includes an effective region and a peripheral region. The first trench extends from the peripheral region over the effective region along a first direction. The gate electrode includes a portion opposed to and insulated from the body region sandwiched between the source region and the drift region. In the peripheral region, the first contact plug is electrically coupled to the gate electrode buried in the first trench such that its longer side is along the first direction when seen in a plan view.