The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Dec. 08, 2020
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Hiroshi Yanagigawa, Tokyo, JP;
Katsumi Eikyu, Tokyo, JP;
Masami Sawada, Tokyo, JP;
Akihiro Shimomura, Tokyo, JP;
Kazuhisa Mori, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/66734 (2013.01); H01L 29/7815 (2013.01);
Abstract
In a trench gate type power MOSFET having a super-junction structure, both improvement of a breakdown voltage of a device and reduction of on-resistance are achieved. The trench gate and a column region are arranged so as to be substantially orthogonal to each other in a plan view, and a base region (channel forming region) and the column region are arranged separately in a cross-sectional view.