Ichihara, Japan

Hironao Shinohara

This inventor holds 25 USPTO granted patents and 5 published patent applications and 8 EPO patents, primarily in Semiconductor Lighting. Top assignees: Toyoda Gosei Co., Ltd., Showa Denko K.k.. Active years: 2010-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hironao Shinohara. Retrieved from https://idiyas.com/inventor/hironao-shinohara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 25 

% Patents Active = 96.0

 

Average Co-Inventor Count = 2.3

ph-index = 5

Forward Citations = 112(Granted Patents)


Location History:

  • Ichihara, JP (2010 - 2016)
  • Chiba, JP (2018 - 2020)

Company Filing History:


Years Active: 2010-2020

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Areas of Expertise:
Light Emitting Element
Gallium Nitride
Semiconductor Device
Manufacturing Method
Lamp
Compound Semiconductor
High Emission Efficiency
Group III Nitride
25 patents (USPTO):Explore Patents

Title: Hironao Shinohara: A Pioneer in Light Emitting Technologies

Introduction

Hironao Shinohara, a prominent inventor based in Ichihara, Japan, has made significant contributions to the field of semiconductor technology, particularly in light emitting elements. With a remarkable portfolio of 25 patents, Shinohara's innovations demonstrate his commitment to advancing technological frontiers.

Latest Patents

Among Shinohara's latest innovations is a patent for a "Light emitting element including contact electrode with laminate structure, and method of manufacturing the same." This patent outlines a method for creating a light emitting element that includes an n-type semiconductor layer featuring an n-type clad layer and AlGaN as a main component. It also describes the formation of an n-side contact electrode with a laminate structure comprising a Ti layer and a Ru layer, where the Ti layer contacts the n-type semiconductor layer. The process includes a heat treatment to establish an ohmic contact between the n-type semiconductor layer and the Ti layer.

Another recent patent is for a "Light-emitting element," which consists of an n-type semiconductor layer primarily composed of AlGaN, a p-type semiconductor layer, and a light-emitting layer sandwiched between the two. This patent details the configuration of an n-electrode and multiple p-electrodes connected to the respective semiconductor layers, emphasizing that the area of the n-electrode is 25% to 50% of the chip area.

Career Highlights

Shinohara has had a successful career, working with leading companies in the industry, including Toyoda Gosei Co., Ltd. and Showa Denko K.K. His work has contributed to the development of advanced materials and methods for the production of light emitting devices, positioning him as a key figure in his field.

Collaborations

Throughout his career, Shinohara has collaborated with esteemed colleagues such as Hiroshi Osawa and Naoki Fukunaga. These partnerships have fostered innovation and have been instrumental in furthering the research and development of semiconductor technologies.

Conclusion

Hironao Shinohara's extensive contributions to light emitting technologies, as reflected in his multiple patents, demonstrate his innovative spirit and engineering expertise. His work continues to influence the semiconductor industry, paving the way for future advancements in light emitting elements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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