Semiconductor light-emitting element, lamp, electronic device and machine

Abstract

A semiconductor light-emitting element () is provided which includes a semiconductor layer (), an n-type electrode () which is provided on an exposed surface () of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (), a transparent conductive film which is provided on the semiconductor layer () and a p-type electrode () which is provided on the transparent conductive film; a light-reflecting layer () is provided between the semiconductor layer () and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode () in the planar view; the p-type electrode () comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode () exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L) which goes through a center () of the pad portion (P) and a center () of the semiconductor layer (); and the distance (D) between the center () of the n-type electrode () and the center () of the pad portion (P) is greater than or equal to the distance (D) between the center () of the pad portion (P) and the center () of the semiconductor layer ().