Toyoda Gosei Co., Ltd.

Showa Denko K.k.

Hironao Shinohara

Hiroshi Osawa

Naoki Fukunaga

Hisayuki Miki

Noritaka Muraki

Hiromitsu Sakai

Yoshiki Saito

Daisuke Shinoda

Shinichi Matsui

Yasuhiro Takenaka

Kensuke Hirano

Koji Kamei

Yasunori Yokoyama

Takashi Hodota

Daisuke Hiraiwa

Remi Ohba

Honglin Wang

Susumu Sugano

Eisuke Yokoyama

Yuichi Nagamatsu

Hiroshi c/o Showa Denko KK Osawa

Noritaka c/o Showa Denko KK Muraki

A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlGaN (0.1&#x2264;x&#x2264;1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Light emitting element including contact electrode with laminate structure, and method of manufacturing the same

A light-emitting element includes an n-type semiconductor layer mainly including AlGaN (0.5&#x2264;x&#x2264;1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Light-emitting element

A light-emitting element includes a semiconductor laminate including a light-emitting layer, a transparent electrode layer formed on the semiconductor laminate, the transparent electrode layer including an oxide including indium, a pad electrode formed on the transparent electrode layer so as to connect to the transparent electrode layer, and a reflective layer including aluminum. The reflective layer is formed under the pad electrode so as not to contact the transparent electrode layer.

A semiconductor light emitting element () includes; an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a p-side power supply portion (), and an n-side power supply portion () that includes an n-side power supply electrode (), an n-side auxiliary electrode () and n-side connective electrodes (). The n-side power supply electrode () and auxiliary electrode () are provided in the inner side beyond the p-type semiconductor layer () viewed from the light emitting layer (). On the p-type semiconductor layer (), a power supply insulating layer () transparent to light from the light emitting layer () is provided, and portions at lower side of the n-side power supply electrode () and auxiliary electrode () are set to have a thickness with which the light is easily reflected, and other portions are set to have a thickness with which the light is easily transmitted.

Semiconductor light emitting element and light emitting device

A semiconductor light emitting element () includes; an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a p-side power supply portion (), and an n-side power supply portion (). A p-side power supply electrode () in the p-side power supply portion () and an n-side power supply electrode () in the n-side power supply portion () are provided at a rear side of the p-type semiconductor layer (), a power supply insulating layer () set to have a first thickness is formed between the p-type semiconductor layer () and the p-side power supply electrode () or the n-side power supply electrode (), and a portion where these electrodes are not provided is set to have a third thickness by forming the protective insulating layer () set to have a second thickness in addition to the power supply insulating layer ().

Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer () so as to a main surface () of a substrate (), a masking step of forming a protective film on the semiconductor layer (), a semiconductor layer removal step of removing the protective film and the semiconductor layer () by laser irradiation to expose the substrate (), a grinding step of reducing the thickness of the substrate (), a polishing step of polishing the substrate (), a laser processing step of providing processing marks to the inside of the substrate (), a division step of creating a plurality of light-emitting devices () while forming a division surface of the substrate () to have a rough surface.

Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp

In a semiconductor light emitting element having a sapphire substrate, and a lower semiconductor layer and an upper semiconductor layer laminated on the sapphire substrate, the sapphire substrate includes a substrate top surface, a substrate bottom surface, first substrate side surfaces and second substrate side surfaces; plural first cutouts and plural second cutouts are provided at border portions between the first substrate side surface and the substrate top surface and between the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface, first lower semiconductor side surfaces and second lower semiconductor side surfaces; plural first projecting portions and plural first depressing portions are provided on the first lower semiconductor side surface; and plural second protruding portions and second flat portions are provided on the second lower semiconductor side surface.

Semiconductor light emitting element, method for producing semiconductor light emitting element and light emitting device

A semiconductor light-emitting element () is provided which includes a semiconductor layer (), an n-type electrode () which is provided on an exposed surface () of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (), a transparent conductive film which is provided on the semiconductor layer () and a p-type electrode () which is provided on the transparent conductive film; a light-reflecting layer () is provided between the semiconductor layer () and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode () in the planar view; the p-type electrode () comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode () exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L) which goes through a center () of the pad portion (P) and a center () of the semiconductor layer (); and the distance (D) between the center () of the n-type electrode () and the center () of the pad portion (P) is greater than or equal to the distance (D) between the center () of the pad portion (P) and the center () of the semiconductor layer ().

Semiconductor light-emitting element, lamp, electronic device and machine

In a semiconductor light emitting element () having a sapphire substrate (), and lower () and upper () semiconductor layers laminated on the sapphire substrate, the substrate includes a substrate top surface (), a substrate bottom surface (), first substrate side surfaces () and second substrate side surfaces (); plural first () and second () cutouts are provided at a border between the first substrate side surface, the second substrate side surface and the substrate top surface; the lower semiconductor layer includes a lower semiconductor bottom surface, a lower semiconductor top surface (), first lower semiconductor side surfaces () and second lower semiconductor side surfaces (); plural first projecting portions () and plural first depressing portions () are provided on the first lower semiconductor side surface; and plural second protruding portions () and second flat portions () are provided on the second lower semiconductor side surface.

Semiconductor light emitting element having a plurality of substrate cutouts and semiconductor layer side surface projections

The semiconductor light-emitting device () of the present invention includes a substrate (); a laminate semiconductor layer () comprised of an n-type semiconductor layer () formed on the substrate (), a light-emitting layer () laminated on the n-type semiconductor layer () and a p-type semiconductor layer () laminated on the light-emitting layer (); a concavo-convex part () for improving a light extraction efficiency, which is formed on all or a part of a top surface () of the laminate semiconductor layer (); a high-concentration p-type semiconductor layer () having a higher dopant concentration than that of the p-type semiconductor layer (), which is laminated on a convex part () that constitutes the concavo-convex part () of the laminate semiconductor layer (); and a translucent current diffusion layer () laminated on at least the high-concentration p-type semiconductor layer ().

Semiconductor light-emitting device with a concavo-convex part formed on a P-type semiconductor layer and method for manufacturing semiconductor light-emitting device

Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (), in which an n-type semiconductor layer (), a light-emitting layer () and a p-type semiconductor layer () are sequentially layered, is formed on a single-crystal underlayer () which is formed on a substrate (). A light-transmitting electrode () is formed on the p-type semiconductor layer (). An insulation layer () is formed on at least a part of the p-type semiconductor layer (), and the light-transmitting electrode () is formed to cover the insulation layer (). A positive electrode bonding pad () is provided in a position A corresponding to the insulation layer () provided on the p-type semiconductor layer (), on a surface () of the light-transmitting electrode (). A sheet resistance of the n-type semiconductor layer () is lower than a sheet resistance of the light-transmitting electrode ().

Group III nitride semiconductor light-emitting device and method of manufacturing the same, and lamp

The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer () is formed on a substrate (), the method including: a substrate processing step of forming, on the (0001) C-plane of the substrate (), a plurality of convex parts () of surfaces () not parallel to the C-plane, to thereby form, on the substrate, an upper surface () that is composed of the convex parts () and a flat surface () of the C-plane; and an epitaxial step of epitaxially growing the group III nitride semiconductor layer () on the upper surface (), to thereby embed the convex parts () in the group III nitride semiconductor layer ().

Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp

A semiconductor light-emitting device () of the present invention includes a substrate (); a laminate semiconductor layer () formed by sequentially laminating an n-type semiconductor layer (), a light-emitting layer (), and a p-type semiconductor layer () on the substrate (); and a translucent electrode layer () formed on a top surface () of the p-type semiconductor layer (), wherein the translucent electrode layer () contains a dopant element, a content of the dopant element within the translucent electrode layer () decreases gradually toward the interface () between the p-type semiconductor layer () and the translucent electrode layer (), and in the translucent electrode layer () is formed a diffusion region in which an element constituting the p-type semiconductor layer () is diffused from the interface () toward the inside of the translucent electrode layer ().

Semiconductor light emitting element, method for manufacturing semiconductor light emitting element, and lamp

A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer () formed on top of a substrate () including a principal plane () having a flat surface () configured from a (0001) C plane, and a plurality of convex portions () including a surface () non-parallel to the C plane having a width (d) of 0.05 to 1.5 &#x3bc;m and height (H) of 0.05 to 1 &#x3bc;m, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d) of the convex portions and top portion thickness (H) of the base layer at the positions of the top portions () of the convex portions satisfy: H=kd(wherein 0.5&#x3c;k&#x3c;5, and H=0.5 &#x3bc;m or more).

Group-III nitride semiconductor light emitting device and production method thereof, and lamp

The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer (), a light-emitting layer (), and a p-type semiconductor layer () that are made of a compound semiconductor are stacked in this order; a positive electrode () made of a conductive translucent electrode; and a negative electrode () made of a conductive electrode, wherein the conductive translucent electrode of the positive electrode () is a transparent conductive film containing crystals composed of InOhaving a hexagonal crystal structure.

Compound semiconductor light-emitting element and method of manufacturing the same, conductive translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus

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Ichihara, Japan

Hironao Shinohara