The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2013
Filed:
May. 20, 2009
Hironao Shinohara, Ichihara, JP;
Naoki Fukunaga, Munakata, JP;
Hironao Shinohara, Ichihara, JP;
Naoki Fukunaga, Munakata, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A semiconductor light-emitting device () of the present invention includes a substrate (); a laminate semiconductor layer () formed by sequentially laminating an n-type semiconductor layer (), a light-emitting layer (), and a p-type semiconductor layer () on the substrate (); and a translucent electrode layer () formed on a top surface () of the p-type semiconductor layer (), wherein the translucent electrode layer () contains a dopant element, a content of the dopant element within the translucent electrode layer () decreases gradually toward the interface () between the p-type semiconductor layer () and the translucent electrode layer (), and in the translucent electrode layer () is formed a diffusion region in which an element constituting the p-type semiconductor layer () is diffused from the interface () toward the inside of the translucent electrode layer ().