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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9130128 B1

PDFFull Text
Date of Patent:
Sep. 08, 2015

Filed:

Nov. 13, 2013

Semiconductor light emitting element and light emitting device

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, Aichi-ken, JP;

Inventor:

Hironao Shinohara, Ichihara, JP;

Assignee:

TOYODA GOSEI CO., LTD., Aichi, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Teresa M Arroyo

Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 29/26 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 29/267 (2006.01); H01L 27/14 (2006.01); H01L 31/00 (2006.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); H01L 33/20 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/46 (2013.01); H01L 33/00 (2013.01); H01L 33/20 (2013.01); H01L 33/36 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01);
Abstract

A semiconductor light emitting element () includes; an n-type semiconductor layer (), a light emitting layer (), a p-type semiconductor layer (), a p-side power supply portion (), and an n-side power supply portion (). A p-side power supply electrode () in the p-side power supply portion () and an n-side power supply electrode () in the n-side power supply portion () are provided at a rear side of the p-type semiconductor layer (), a power supply insulating layer () set to have a first thickness is formed between the p-type semiconductor layer () and the p-side power supply electrode () or the n-side power supply electrode (), and a portion where these electrodes are not provided is set to have a third thickness by forming the protective insulating layer () set to have a second thickness in addition to the power supply insulating layer ().

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