The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2020
Filed:
Sep. 14, 2017
Applicant:
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Inventors:
Yasuhiro Takenaka, Kiyosu, JP;
Yoshiki Saito, Kiyosu, JP;
Shinichi Matsui, Kiyosu, JP;
Daisuke Shinoda, Kiyosu, JP;
Takashi Hodota, Chiba, JP;
Hironao Shinohara, Chiba, JP;
Assignee:
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0075 (2013.01); H01L 33/38 (2013.01); H01L 33/382 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 2933/0016 (2013.01);
Abstract
A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlGaN (0.1≤x≤1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.