The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 2018

Filed:

Jul. 06, 2017
Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Yasuhiro Takenaka, Kiyosu, JP;

Yoshiki Saito, Kiyosu, JP;

Shinichi Matsui, Kiyosu, JP;

Daisuke Shinoda, Kiyosu, JP;

Hisayuki Miki, Chiba, JP;

Hironao Shinohara, Chiba, JP;

Assignee:

TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/227 (2006.01); H01L 33/38 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/32 (2013.01);
Abstract

A light-emitting element includes an n-type semiconductor layer mainly including AlGaN (0.5≤x≤1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.


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