The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
May. 12, 2009
Susumu Sugano, Fujioka, JP;
Hisayuki Miki, Chiba, JP;
Hironao Shinohara, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer () so as to a main surface () of a substrate (), a masking step of forming a protective film on the semiconductor layer (), a semiconductor layer removal step of removing the protective film and the semiconductor layer () by laser irradiation to expose the substrate (), a grinding step of reducing the thickness of the substrate (), a polishing step of polishing the substrate (), a laser processing step of providing processing marks to the inside of the substrate (), a division step of creating a plurality of light-emitting devices () while forming a division surface of the substrate () to have a rough surface.